H03K17/6871- Electronic switching or gating, i.e.

not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors H03K17/687- Electronic switching or gating, i.e.not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices H03K17/56- Electronic switching or gating, i.e.not by contact-making and –breaking characterised by the components used H03K17/51- Electronic switching or gating, i.e.H03K17/063- Modifications for ensuring a fully conducting state in field-effect transistor switches.H03K17/06- Modifications for ensuring a fully conducting state.

H03K17/00- Electronic switching or gating, i.e.

Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Application filed by International Rectifier Corporation filed Critical International Rectifier Corporation Priority to DE112007000901T priority Critical patent/DE112007000901T5/en Priority to JP2009504328A priority patent/JP2009533899A/en Publication of WO2007117641A2 publication Critical patent/WO2007117641A2/en Publication of WO2007117641A3 publication Critical patent/WO2007117641A3/en Publication of WO2007117641B1 publication Critical patent/WO2007117641B1/en Links ( en Inventor Christian Locatelli Andrea Francesco Merello Original Assignee International Rectifier Corporation Priority date (The priority date is an assumption and is not a legal conclusion. Google Patents WO2007117641A2 - Circuit to optimize charging of bootstrap capacitor with bootstrap diode emulator WO2007117641A2 - Circuit to optimize charging of bootstrap capacitor with bootstrap diode emulator

Bootstrap capacitor transistor biasing